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UCC21231

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具有 4A 拉电流和 6A 灌电流的高速双通道隔离式栅极驱动器

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UCC21231

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产品详情

Number of channels 2 Isolation rating Functional Withstand isolation voltage (VISO) (Vrms) 2000 Transient isolation voltage (VIOTM) (VPK) 2500 Power switch GaNFET, MOSFET Features Enable, High CMTI, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 6.5 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety-Capable Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Fall time (ns) 8 Undervoltage lockout (typ) (V) 5
Number of channels 2 Isolation rating Functional Withstand isolation voltage (VISO) (Vrms) 2000 Transient isolation voltage (VIOTM) (VPK) 2500 Power switch GaNFET, MOSFET Features Enable, High CMTI, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 6.5 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety-Capable Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Fall time (ns) 8 Undervoltage lockout (typ) (V) 5
WSON (DLG) 13 16 mm² 4 x 4
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Up to 4A peak source and 6A peak sink output
  • 1.6KVRMS basic isolation rating.
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • Up to 25V VDD output drive supply with 5V VDD UVLO protection
  • UVLO protection for all power supplies
  • Fast enable for power sequencing

  • 4×4mm SON package with >1.2mm spacing:

    • Thermal PAD under each channel
    • 14.1°C/W RƟJB

  • Junction temperature range –40 to +150°C
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Up to 4A peak source and 6A peak sink output
  • 1.6KVRMS basic isolation rating.
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • Up to 25V VDD output drive supply with 5V VDD UVLO protection
  • UVLO protection for all power supplies
  • Fast enable for power sequencing

  • 4×4mm SON package with >1.2mm spacing:

    • Thermal PAD under each channel
    • 14.1°C/W RƟJB

  • Junction temperature range –40 to +150°C

The UCC21231 is an isolated dual-channel gate driver family with programmable dead time and wide temperature range. This device exhibits consistent performance and robustness under extreme temperature conditions. UCC21231 is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, and GaN transistors.

The UCC21231 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 1.6kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, enable feature to shut down both outputs simultaneously, integrated de-glitch filter that rejects input transients shorter than 5ns, and negative voltage handling for up to –2V spikes for 200ns on input and output pins. All supplies have UVLO protection.

The UCC21231 device accepts VDD supply voltages up to 25V. An input VCCI range from 3V to 5.5V makes the driver suitable for interfacing with digital controllers. All supply voltage pins have undervoltage lock-out (UVLO) protection.

With all these advanced features, the UCC21231 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21231 is an isolated dual-channel gate driver family with programmable dead time and wide temperature range. This device exhibits consistent performance and robustness under extreme temperature conditions. UCC21231 is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, and GaN transistors.

The UCC21231 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 1.6kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, enable feature to shut down both outputs simultaneously, integrated de-glitch filter that rejects input transients shorter than 5ns, and negative voltage handling for up to –2V spikes for 200ns on input and output pins. All supplies have UVLO protection.

The UCC21231 device accepts VDD supply voltages up to 25V. An input VCCI range from 3V to 5.5V makes the driver suitable for interfacing with digital controllers. All supply voltage pins have undervoltage lock-out (UVLO) protection.

With all these advanced features, the UCC21231 device enables high efficiency, high power density, and robustness in a wide variety of power applications.
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类型 标题 下载最新的英语版本 日期
* 数据表 UCC21231 4A Source, 6A Sink, High-Speed, Dual-Channel Isolated Gate Driver in Low-Profile SON Package 数据表 PDF | HTML 2024年 4月 15日
EVM 用户指南 UCC21231AEVM-108 评估模块 PDF | HTML 英语版 PDF | HTML 2024年 4月 29日

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评估板

UCC21231AEVM-108 — UCC21231A 评估模块

UCC21231AEVM-108 专为评估 UCC21231A 栅极驱动器而设计。UCC21231A 是具有 4A 峰值拉电流和 6A 峰值灌电流的 1.6kVrms 隔离式双通道栅极驱动器，可驱动 Si MOSFET、IGBT 和 WBG 器件（如 SiC 和 GaN 晶体管）。本用户指南提供了 UCC21231A 的完整评估模块原理图、印刷电路板布局布线、物料清单、测试设置和特性说明。
用户指南: PDF | HTML
英语版: PDF | HTML
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  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
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