UCC21331

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具有使能逻辑和可编程死区时间的 3kVRMS 4A/6A 双通道栅极驱动器

产品详情

Number of channels 2 Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 3000 Transient isolation voltage (VIOTM) (VPK) 4242 Power switch IGBT, MOSFET, SiCFET Features Enable, High CMTI, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 9.2 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety-Capable Input threshold CMOS, TTL Operating temperature range (°C) -40 to 150 Rating Automotive Fall time (ns) 8 Undervoltage lockout (typ) (V) 12
Number of channels 2 Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 3000 Transient isolation voltage (VIOTM) (VPK) 4242 Power switch IGBT, MOSFET, SiCFET Features Enable, High CMTI, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 9.2 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety-Capable Input threshold CMOS, TTL Operating temperature range (°C) -40 to 150 Rating Automotive Fall time (ns) 8 Undervoltage lockout (typ) (V) 12
SOIC (D) 16 59.4 mm² 9.9 x 6
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 12V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum delay matching
    • 6ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast enable for power sequencing
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 12V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum delay matching
    • 6ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast enable for power sequencing

The UCC21331 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, and IGBT transistors.

The UCC21331 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 3kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21331 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21331 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, and IGBT transistors.

The UCC21331 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 3kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21331 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

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* 数据表 UCC21331x 4A, 6A, 3.0kVRMS Isolated Dual-Channel Gate Driver 数据表 PDF | HTML 2024年 5月 2日

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