UCC27200-Q1
- Qualified for Automotive Applications
- AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1:
–40°C to 125°C Ambient Operating Temperature Range - Device HBM ESD Classification Level 2
- Device CDM ESD Classification Level C5
- Device Temperature Grade 1:
- Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration
- Maximum Boot Voltage: 120 V
- Maximum VDD Voltage: 20 V
- On-Chip 0.65-V VF, 0.6-Ω RD Bootstrap Diode
- Greater than 1 MHz of Operation
- 20-ns Propagation Delay Times
- 3-A Sink, 3-A Source Output Currents
- 8-ns Rise and 7-ns Fall Time With 1000-pF Load
- 1-ns Delay Matching
- Specified from –40°C to 140°C (Junction Temperature)
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The UCC2720x-Q1 family of high-frequency N-channel MOSFET drivers include a 120-V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward, and active-clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1 ns between the turnon and turnoff of each other.
An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers, forcing the outputs low if the drive voltage is below the specified threshold.
Two versions of the UCC2720x-Q1 are offered – the UCC27200-Q1 has high-noise-immune CMOS input thresholds, and the UCC27201-Q1 has TTL-compatible thresholds.
Both devices are offered in the 8-pin SO PowerPAD (DDA) package.
For all available packages, see the orderable addendum at the end of the data sheet.您可能感兴趣的相似产品
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技术文档
类型 | 标题 | 下载最新的英语版本 | 日期 | |||
---|---|---|---|---|---|---|
* | 数据表 | UCC2720x-Q1 120-V Boot, 3-A Peak, High-Frequency High-Side and Low-Side Driver 数据表 (Rev. C) | PDF | HTML | 2016年 8月 2日 | ||
应用手册 | 了解并比较栅极驱动器的峰值电流能力 | PDF | HTML | 英语版 | PDF | HTML | 2022年 5月 19日 | |
应用简报 | 了解峰值源电流和灌电流 (Rev. A) | 英语版 (Rev.A) | 2020年 4月 29日 | |||
应用简报 | 适用于栅极驱动器的外部栅极电阻器设计指南 (Rev. A) | 英语版 (Rev.A) | 2020年 4月 29日 | |||
更多文献资料 | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018年 10月 29日 | ||||
更多文献资料 | MOSFET 和 IGBT 栅极驱动器电路的基本原理 | 最新英语版本 (Rev.A) | 2018年 4月 17日 |
设计和开发
如需其他信息或资源,请点击以下任一标题进入详情页面查看(如有)。
UCC27200 and UCC27200A TINA-TI Transient Reference Design
封装 | 引脚 | 下载 |
---|---|---|
HSOIC (DDA) | 8 | 查看选项 |
订购和质量
- RoHS
- REACH
- 器件标识
- 引脚镀层/焊球材料
- MSL 等级/回流焊峰值温度
- MTBF/时基故障估算
- 材料成分
- 鉴定摘要
- 持续可靠性监测
- 制造厂地点
- 封装厂地点